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Room-temperature operation of InGaAs-based hot-electron transistors

โœ Scribed by Moise, T.S.; Seabaugh, A.C.; Beam, E.A., III.; Kao, Y.-C.; Randall, J.N.


Book ID
114535322
Publisher
IEEE
Year
1993
Tongue
English
Weight
141 KB
Volume
40
Category
Article
ISSN
0018-9383

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Room temperature operated single electro
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We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia