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Room temperature operation of epitaxially grown Si/Si[sub 0.5]Ge[sub 0.5]/Si resonant interband tunneling diodes

✍ Scribed by Rommel, Sean L.; Dillon, Thomas E.; Dashiell, M. W.; Feng, H.; Kolodzey, J.; Berger, Paul R.; Thompson, Phillip E.; Hobart, Karl D.; Lake, Roger; Seabaugh, Alan C.; Klimeck, Gerhard; Blanks, Daniel K.

Book ID: 121766232
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 324 KB
Volume: 73
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.122419

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