Room temperature MBE deposition of Bi2Te3 and Sb2Te3 thin films with low charge carrier densities

✍ Scribed by Peranio, N. ;Winkler, M. ;Aabdin, Z. ;König, J. ;Böttner, H. ;Eibl, O.

• Book ID: 105366616
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 302 KB
• Volume: 209
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201127440

✦ Synopsis

Abstract

Sb~2~Te~3~ and Bi~2~Te~3~ thin films were grown at room temperature on SiO~2~ substrates using MBE and were subsequently annealed at 250 °C. The films were stoichiometric, polycrystalline, textured, and yielded strikingly low charge carrier densities of about 2.7 × 10^19^ cm^−3^. The in‐plane transport properties were measured at room temperature, the thermopower was 130 µV K^−1^ for Sb~2~Te~3~ and −153 µV K^−1^ for Bi~2~Te~3~ thin films. The small charge carrier densities are explained by a reduced antisite defect density due to the low temperatures to which the thin films were exposed during annealing.