MBE growth optimization of topological i
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J. Krumrain; G. Mussler; S. Borisova; T. Stoica; L. Plucinski; C.M. Schneider; D
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Article
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2011
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Elsevier Science
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English
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We investigated the growth of the topological insulator Bi 2 Te 3 on Si(1 1 1) substrates by means of molecular-beam epitaxy (MBE). The substrate temperature as well as the Bi and Te beam-equivalent pressure (BEP) was varied in a large range. The structure and morphology of the layers were studied u