Room-Temperature CW Operation of GaInN Multiple Quantum Well Laser Diodes with Optimized Indium Content

✍ Scribed by Tsujimura, A. ;Ishibashi, A. ;Hasegawa, Y. ;Kamiyama, S. ;Kidoguchi, I. ;Otsuka, N. ;Miyanaga, R. ;Sugahara, G. ;Suzuki, M. ;Kume, M. ;Harafuji, K. ;Ban, Y.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 151 KB
• Volume: 176
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/(sici)1521-396x(199911)176:1<53::aid-pssa53>3.0.co;2-a

✦ Synopsis

The indium content of GaInN/GaN multiple quantum well (MQW) laser diodes (LDs) was optimized by means of measurements of amplified spontaneous emission (ASE) spectrum and threshold current density. The dependence of ASE spectra on x in Ga 1Àx In x N x 0X07 to 0.11) MQW LDs suggested that low indium content led to small band-gap inhomogeneity. The threshold current density of the LDs decreased with decreasing indium content. Ga 0X93 In 0X07 N/GaN MQW LDs were operated with a threshold current density of 11 kA/cm 2 under CW condition at room temperature. It is necessary for GaN-based 400 nm band LDs to suppress the band-gap inhomogeneity in the GaInN MQW by optimizing the indium content.