Room-Temperature CW Operation of GaInN M
โ
Tsujimura, A. ;Ishibashi, A. ;Hasegawa, Y. ;Kamiyama, S. ;Kidoguchi, I. ;Otsuka,
๐
Article
๐
1999
๐
John Wiley and Sons
๐
English
โ 151 KB
๐ 2 views
The indium content of GaInN/GaN multiple quantum well (MQW) laser diodes (LDs) was optimized by means of measurements of amplified spontaneous emission (ASE) spectrum and threshold current density. The dependence of ASE spectra on x in Ga 1รx In x N x 0X07 to 0.11) MQW LDs suggested that low indium