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Room-Temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure

โœ Scribed by Kneissl, M. ;Bour, D. P. ;Van de Walle, C. G. ;Romano, L. T. ;Northrup, J. E. ;Wood, R. M. ;Teepe, M. ;Schmidt, T. ;Johnson, N. M.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
150 KB
Volume
176
Category
Article
ISSN
0031-8965

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The indium content of GaInN/GaN multiple quantum well (MQW) laser diodes (LDs) was optimized by means of measurements of amplified spontaneous emission (ASE) spectrum and threshold current density. The dependence of ASE spectra on x in Ga 1ร€x In x N x 0X07 to 0.11) MQW LDs suggested that low indium