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Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

✍ Scribed by Kuramoto, Masaru; Sasaoka, Chiaki; Hisanaga, Yukihiro; Kimura, Akitaka; Yamaguchi, A. Atsushi; Sunakawa, Haruo; Kuroda, Naotaka; Nido, Masaaki; Usui, Akira; Mizuta, Masashi

Book ID: 111645163
Publisher: Institute of Pure and Applied Physics
Year: 1999
Tongue: English
Weight: 158 KB
Volume: 38
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.L184

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