Room temperature continuous wave low threshold current 850 nm ion implanted vertical cavity surface emitting laser using tungsten wires as mask

✍ Scribed by Haisong Wang; Guotong Du; Hongfeng Cui; Chengdong Xu; Junfeng Song

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 190 KB
• Volume: 35
• Category: Article
• ISSN: 0030-3992
• DOI: 10.1016/s0030-3992(03)00012-4

✦ Synopsis

Vertical cavity surface emitting laser (VCSEL) emitting at 850 nm plays more important role in local ÿber communication. Most of the VCSEL products emitting at 850 nm are fabricated by ion implanting. Their threshold current is about 4-6 mA. Using tungsten wires as mask, we developed the parameter of implantation and fabricated 850 nm VCSEL under room temperature CW (continuous wave) operation. The threshold current was 1:4 mA, which was lower than that of most similar devices reported before. The resistance of the device was 206 . The light power was 0:92 mW at 6:74 mA under room temperature CW operation, while the light power did not achieve obvious saturation. The most remarkable advantage was that the fabrication method was simple and the optimization was available to implanting parameter.