Effect on polarization control in 850 nm vertical cavity surface emitting laser fabricated by H+ ion inclined implantation using tungsten wire as mask

Room temperature continuous wave low thr

Room temperature continuous wave low threshold current 850 nm ion implanted vertical cavity surface emitting laser using tungsten wires as mask

✍ Haisong Wang; Guotong Du; Hongfeng Cui; Chengdong Xu; Junfeng Song 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 190 KB

Vertical cavity surface emitting laser (VCSEL) emitting at 850 nm plays more important role in local ÿber communication. Most of the VCSEL products emitting at 850 nm are fabricated by ion implanting. Their threshold current is about 4-6 mA. Using tungsten wires as mask, we developed the parameter o

Effect on polarization control in 850&#xa0;nm vertical cavity surface emitting laser fabricated by H+ ion inclined implantation using tungsten wire as mask

Effect on polarization control in 850 nm vertical cavity surface emitting laser fabricated by H+ ion inclined implantation using tungsten wire as mask