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Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafers

✍ Scribed by Motyka, M; Kudrawiec, R; Sęk, G; Misiewicz, J; Krestnikov, I L; Mikhrin, S; Kovsh, A


Book ID
121481650
Publisher
Institute of Physics
Year
2006
Tongue
English
Weight
358 KB
Volume
21
Category
Article
ISSN
0268-1242

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In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i