Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

✍ Scribed by I. V. Ivonin; N. N. Krivolapov; L. G. Lavrent'eva; L. P. Porokhovnichenko

• Book ID: 112517128
• Publisher: Springer
• Year: 1992
• Tongue: English
• Weight: 239 KB
• Volume: 35
• Category: Article
• ISSN: 1573-9228
• DOI: 10.1007/bf01324985