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Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers: experiment and modeling

✍ Scribed by Belenky, G.L.; Reynolds, C.L., Jr.; Donetsky, D.V.; Shtengel, G.E.; Hybertsen, M.S.; Alam, M.A.; Baraff, G.A.; Smith, R.K.; Kazarinov, R.F.; Winn, J.; Smith, L.E.


Book ID
117869339
Publisher
IEEE
Year
1999
Tongue
English
Weight
122 KB
Volume
35
Category
Article
ISSN
0018-9197

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