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Role of incident kinetic energy of adatoms in thin film growth

✍ Scribed by Karl-Heinz Müller

Publisher
Elsevier Science
Year
1987
Weight
338 KB
Volume
184
Category
Article
ISSN
0167-2584

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📜 SIMILAR VOLUMES

Kinetics of thermal growth of thin silic
Kinetics of thermal growth of thin silicon oxide films
✍ G.C. Sarti; F. Santarelli; G. Camera Roda 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 727 KB

thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order