RHOMBOHEDRAL ELEMENTAL BORON
β Scribed by Sands, Donald E.; Hoard, J. L.
- Book ID
- 126465132
- Publisher
- American Chemical Society
- Year
- 1957
- Tongue
- English
- Weight
- 249 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0002-7863
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Carbon atoms in the//-rhombohedral boron structure substitute for boron atoms at the polar sites of the B~2 icosahedra. The donor level of the excess electron of carbon coincides with the upper valence band, thus raising the hopping probability within this band. This assumption is consistent with va
Beta-boron is a semiconductor with a band gap of 1.5 eV. It is hard and refractory with a very high melting point of 2300 K. It satisfies the "small atom and large number of atoms (105) per unit cell" criteria for potentially high thermoelectric efficiency. Crystallographically, beta-boron is made u
Some characteristic features of the technology of producing -rhombohedral boron by amorphous powder crystallization were considered. Powder samples were heated in a high-temperature resistance furnace at 83C/min to 10003C and then the rate was reduced to 23C/min. After the above heating rates, pyrol