Metals in beta-rhombohedral boron
β Scribed by Joe Wong; Glen A. Slack
- Book ID
- 103933518
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 126 KB
- Volume
- 158
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
β¦ Synopsis
Beta-boron is a semiconductor with a band gap of 1.5 eV. It is hard and refractory with a very high melting point of 2300 K. It satisfies the "small atom and large number of atoms (105) per unit cell" criteria for potentially high thermoelectric efficiency. Crystallographically, beta-boron is made up of compact 812 and BTO polyhedral units and isolated B atoms, all linked together by strong, directional covalent bonds. These structural and bonding features create a very open structure in beta-boron. Assuming RB = 0.8811, the degree of space filling is estimated to be only 36%. Hence, the structure contains many holes that can interstitially accommodate a variety of metal atoms in the Periodic Table.
π SIMILAR VOLUMES
Rhombohedral boron ( -rh. boron) was doped with V, Cr, Fe, Co, or Zr to investigate the relationship between occupancies of the doping sites and thermoelectric properties. Doping with V or Cr, which preferentially occupy the A 1 sites, produces an increase in electrical conductivity and a negative S