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RHEED oscillation and surface diffusion length on GaAs(111)B surface

✍ Scribed by Shitara, T.; Kondo, E.; Nishinaga, T.


Book ID
103165811
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
301 KB
Volume
99
Category
Article
ISSN
0022-0248

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Comparison of GaN Buffer Layers Grown on
✍ Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 104 KB πŸ‘ 1 views

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A