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RHEED intensity oscillations observed during growth of Ge on Si(111) substrates

✍ Scribed by A. Daniluk; P. Mazurek; P. Mikołajczak

Book ID
117216745
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
555 KB
Volume
369
Category
Article
ISSN
0039-6028

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RHEED studies of MnF2 epitaxial growth o
RHEED studies of MnF2 epitaxial growth on Si(111) substrates
✍ Yakovlev, N. L.; Banshchikov, A. G.; Moisseeva, M. M.; Sokolov, N. S.; Beeby, J. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 182 KB 👁 1 views

Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i