InGaP/GaAs heterojunction bipolar transi
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Liu, Xiang; Yuan, Jiann S.; Liou, Juin J.
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Article
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2008
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Elsevier Science
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English
โ 189 KB
Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec