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RF power transistors for reliable communications systems

โœ Scribed by Reich, B.; Hakim, E.B.; Malinowski, G.


Book ID
114589966
Publisher
IEEE
Year
1970
Tongue
English
Weight
392 KB
Volume
17
Category
Article
ISSN
0018-9383

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InGaP/GaAs heterojunction bipolar transi
โœ Liu, Xiang; Yuan, Jiann S.; Liou, Juin J. ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 189 KB

Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec