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RF power transistor storage time: theory and measurements

โœ Scribed by Sokal, N.O.


Book ID
111642140
Publisher
IEEE
Year
1976
Tongue
English
Weight
518 KB
Volume
11
Category
Article
ISSN
0018-9200

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InGaP/GaAs heterojunction bipolar transi
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Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec