Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec
β¦ LIBER β¦
Nonuniform RF Overstress in High-Power Transistors and Amplifiers
β Scribed by Stopel, A.; Leibovitch, M.; Shapira, Y.
- Book ID
- 114619350
- Publisher
- IEEE
- Year
- 2008
- Tongue
- English
- Weight
- 601 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0018-9383
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