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New driver for high-efficiency switching RF power amplifiers

✍ Scribed by Francisco Javier Ortega-González

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
168 KB
Volume
43
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

This paper describes a new driver circuit for high‐efficiency RF switching power amplifiers (class E, class D) based on a small‐area driver transistor, intrinsic input capacitances of the output‐power transistor, and a shaping network. The driver operation is based on class‐E principles. Among the main benefits of this new driver are high efficiency, very low‐bias voltage, and circuit simplicity. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 370–372, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20472

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