”Reverse” annealing mechanism in ion-doped silicon layers subjected to electron beam heating

✍ Scribed by R. Gretchel; V. A. Kagadei; N. I. Lebedeva; D. I. Proskurovskii; E. B. Yankelevich

• Book ID: 112429465
• Publisher: Springer
• Year: 1989
• Tongue: English
• Weight: 460 KB
• Volume: 32
• Category: Article
• ISSN: 1573-9228
• DOI: 10.1007/bf00898546