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Results of In-Situ Annealing of Ion-Implanted Silicon in a High Voltage Electron Microscope

โœ Scribed by Hoehl, D. ;Bartsch, H.

Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
526 KB
Volume
112
Category
Article
ISSN
0031-8965

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High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 โ€ข 10 10 cm ร€2 . The low dose ens