✦ LIBER ✦

Responsivity of ion-implanted p-n junction in a GaAs electroabsorption avalanche detector

✍ Scribed by Zuleeg, R.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

P-N JUNCTION FORMATION IN ION-IMPLANTED

✍ Marine, J. 📂 Article 📅 1970 🏛 American Institute of Physics 🌐 English ⚖ 446 KB

Dependency of p-n junction depth on ion

✍ H. Ebe; M. Tanaka; Y. Miyamoto 📂 Article 📅 1999 🏛 Springer US 🌐 English ⚖ 260 KB

Some properties of ion-implanted p−n jun

✍ P. Zandveld 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 682 KB

Structure and characteristics of the hig

✍ Kalinina, E V; Ivanov, A M; Strokan, N B; Lebedev, A A 📂 Article 📅 2011 🏛 Institute of Physics 🌐 English ⚖ 707 KB

p+-n junction formed by dual implantatio

✍ Taira, K.; Kasahara, J.; Kato, Y.; Arai, M.; Watanabe, N. 📂 Article 📅 1983 🏛 IEEE 🌐 English ⚖ 339 KB

AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT A

✍ S. M. Sze 📂 Article 📅 1966 🏛 American Institute of Physics 🌐 English ⚖ 387 KB