Resonant Tunneling Through Two Discrete Energy States
β Scribed by van der Vaart, N.; Godijn, S.; Nazarov, Y.; Harmans, C.; Mooij, J.; Molenkamp, L.; Foxon, C.
- Book ID
- 111694051
- Publisher
- The American Physical Society
- Year
- 1995
- Tongue
- English
- Weight
- 406 KB
- Volume
- 74
- Category
- Article
- ISSN
- 0031-9007
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π SIMILAR VOLUMES
We have observed remarkable new structure in the source-drain I(V) characteristics of a symmetric double barrier resonant tunneling device in which the cross sectional area may be varied from = 1 /cm2 to -0.1 jrm2 by applying a voltage to a gate. In the source-drain voltage range close to, but slig
## Abstract Resonant electronic transport through two coupled nonβinteracting singleβlevel quantum dots attached to ferromagnetic leads with collinear magnetizations is analyzed theoretically. Coupling of the dots to external leads as well as the interβdot coupling are assumed to be spin dependent.