Resonant tunneling through magnetic edge states
โ Scribed by F.M. Peeters; M. Helm; P. England; J.R. Hayes; E. Colas; J.P. Harbison; L.T. Florez
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 301 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
We have observed remarkable new structure in the source-drain I(V) characteristics of a symmetric double barrier resonant tunneling device in which the cross sectional area may be varied from = 1 /cm2 to -0.1 jrm2 by applying a voltage to a gate. In the source-drain voltage range close to, but slig
We use a semiclassical approach for analyzing the tunneling transport through a normal conductor in contact with superconducting mirrors. Our analysis of the electron-hole propagation along semiclassical trajectories shows that resonant transmission through Andreev levels is possible resulting in an