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Resonant Raman scattering in hydrogen and nitrogen doped ZnO

✍ Scribed by Friedrich, F.; Nickel, N. H.

Book ID: 121494489
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 415 KB
Volume: 91
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2783222

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## Abstract N‐doped ZnO (ZnO:N) thin films were prepared by atmospheric pressure mist chemical vapor deposition. The as‐grown ZnO:N film was of high resistivity with ambiguous carrier type, while the annealed sample showed p‐type conductivity with a resistivity of 22.3 Ω cm and hole concentration o