Resonant magnetotunneling through individual self-assembled InAs quantum dots

✍ Scribed by A. Thornton; I.E. Itskevich; T. Ihn; M. Henini; P. Moriarty; A Nogaret; P.H. Beton; L. Eaves; P.C. Main; J.R. Middleton; M. Heath

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 168 KB
• Volume: 21
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0192

✦ Synopsis

A single-barrier GaAs/AlAs/GaAs heterostructure, with self-assembled In-based quantum dots incorporated in the AlAs tunnel barrier, exhibits a series of resonant peaks in the low temperature current-voltage characteristics. We argue that each peak arises from singleelectron tunneling through the discrete zero-dimensional state of an individual InAs dot. We use the tunneling for fine probing of the local density of states in the emitter-accumulation layer. Landau-quantized states are resolved at magnetic field B I as low as 0.2 T. Spinsplitting of the dot electron states has been observed for B ⊥ I .