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Resonance and parametric effects in IMPATT diodes

✍ Scribed by Harth, W.

Book ID: 114589864
Publisher: IEEE
Year: 1970
Tongue: English
Weight: 681 KB
Volume: 17
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1970.16971

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## Abstract The possibility of distortion of stable distributions of non‐equilibrium carriers in semiconductors (dielectrics) due to the dependence of dielectric permittivity and mobility on the electric field strength or filling rate of impurity centres is considered. It is shown that a semiconduc