Parametric Instability and Resonance Effects in Semiconductors

✍ Scribed by P. M. Karageorgy-Alkalaev; A. Yu. Leiderman

• Publisher: John Wiley and Sons
• Year: 1970
• Tongue: English
• Weight: 569 KB
• Volume: 40
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.19700400107

✦ Synopsis

Abstract

The possibility of distortion of stable distributions of non‐equilibrium carriers in semiconductors (dielectrics) due to the dependence of dielectric permittivity and mobility on the electric field strength or filling rate of impurity centres is considered. It is shown that a semiconductor possesses resonance properties in the self‐oscillation regime.