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Resonance absorption in the amorphous semiconductor Si12Ge10As30Te48

✍ Scribed by M.A. Barakat; K.C. Kao; E. Bridges


Book ID
118330312
Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
289 KB
Volume
18
Category
Article
ISSN
0022-3093

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Thin films of Te46\_xAs32 +xGe10Si12 (x=0,5) of different thicknesses are deposited on glass substrate by vacuum evaporation. X-ray diffraction revealed the formation of amorphous films. The value of the optical band gap, Eg, is found to increase with the thickness of the films and with increasing A