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Preparation and investigation on glasses in the Te46As32Ge10Si12and Te41As37Ge10Si12systems

โœ Scribed by N. A. Hegab; M. Fadel; M. M. El-Samanoudy

Publisher
Springer
Year
1995
Tongue
English
Weight
344 KB
Volume
30
Category
Article
ISSN
0022-2461

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โœฆ Synopsis

Thin films of Te46_xAs32 +xGe10Si12 (x=0,5) of different thicknesses are deposited on glass substrate by vacuum evaporation. X-ray diffraction revealed the formation of amorphous films. The value of the optical band gap, Eg, is found to increase with the thickness of the films and with increasing As content. The films are heat treated at different elevated temperatures from 298 to 423 K. The values of E~ are found to decrease with increasing temperature of heat treatment. The band tail, Ee, obey Urbach's empirical relation.

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โœ S.S. Fouad ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 85 KB

The structure has been examined theoretically of the glassy Te \V As >V Ge Si substances that have semiconducting properties of potential use as memory switching elements in a variety of electronic devices. The optical gap E has been calculated for the amorphous Te \V As >V Ge Si system prepared und