A theoretical investigation of the correlation between the arbitrarily defined optical gap energy and the chemical bond in Te46-xAs32+xGe10Si12 system
✍ Scribed by S.S. Fouad
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 85 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0042-207X
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✦ Synopsis
The structure has been examined theoretically of the glassy Te \V As >V Ge Si substances that have semiconducting properties of potential use as memory switching elements in a variety of electronic devices. The optical gap E has been calculated for the amorphous Te \V As >V Ge Si system prepared under vacuum with x"0, 1, 2, 4 and 5. These calculation were based mainly on the volume fraction and the optical gap of each element of the alloys. The glass transition temperature ¹ was compared with an arbitrarily defined optical gap energy E and ¹ provided an index of atomic mobility and E an index of the covalent bond strength. The nearest neighbour coordination number was also defined for the system under study. The relationship between E and chemical composition in the vacuum prepared Te \V As >V Ge Si is discussed in terms of the average heat of atomization H and average cordination number m. The later are computed from the heats of atomization and the coordination number of used elements, respectively. From the calculation the ¹ -E correlation is interpreted in terms of a proposed fluidity equation for covalent liquids with 2.764m42.81.