Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermal annealing: T. Makino and H. Nakamura. Solid-St. Electron. 24, 49 (1981)

• Publisher: Elsevier Science
• Year: 1981
• Tongue: English
• Weight: 115 KB
• Volume: 21
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(81)90477-7