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Residual strain in Si-Si1−xGex quantum dots

✍ Scribed by Y.S Tang; C.M Sotomayor Torres; S Nilsson; B Dietrich; W Kissinger; T.E Whall; E.H.C Parker; H Presting; H Kibbel


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
439 KB
Volume
40
Category
Article
ISSN
0038-1101

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Intersubband transitions in strained Si/
✍ Georgios Hionis; Maria Tsetseri; Anna Zora; Georgios P. Triberis 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 151 KB

The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained