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Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes—Theoretical investigation

✍ Scribed by Chen, Haoran; Yang, Lin'an; Long, Shuang; Hao, Yue

Book ID: 120508883
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 1013 KB
Volume: 113
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.4804414

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