Capacitance Anomaly in the Negative Differential Resistance Region of Resonant Tunneling Diodes
β Scribed by Shimizu, Naofumi; Waho, Takao; Ishibashi, Tadao
- Book ID
- 111865315
- Publisher
- Institute of Pure and Applied Physics
- Year
- 1997
- Tongue
- English
- Weight
- 586 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0021-4922
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π SIMILAR VOLUMES
We present a comprehensive investigation of the Periodic Fine Structures (PFS's). These PFS's are observed in the Negative Differential Resistance (NDR) region of double-barrier resonant-tunneling diodes (DBRTD's). DBRTD's were fabricated on MBE material with different well widths and barrier materi
Interface roughness in double-barrier resonant-tunneling devices affects the lateral electron motion in the quantum well and can give rise to subsidiary subbands or quasibound states in the well. We demonstrate that a shoulder frequently appearing beyond the principal resonance peak in the current-v