𝔖 Bobbio Scriptorium
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Reply to “Interstitial ordering in tantalum”

✍ Scribed by R.H. Geiss; K.R. Lawless


Book ID
116057509
Publisher
Elsevier Science
Year
1970
Weight
69 KB
Volume
4
Category
Article
ISSN
0036-9748

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Influence of interstitial ordering of ni
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In tantalum samples containing more than 1.2 at.?; of nitrogen in solid solution, electrical resietivi,ty is reduced by up to 59 per cent during annealing. It is shown that this reduction is caused by partial ordering of the nitrogen atoms in the tantalum lattice. Experimental results on the depende

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H = 1/2 (F, -F) d = 1/2{bt. (G\*-T)}{+ ( T,,-T\*)} FIG. 3. Force-distance cntve consistent with the deformation dynamics of a-titanium. solute atoms may also be responsible for the deformation dynamics of other c.p.h. metals, such as, for example, zirconium.