The epitaxial growth of cubic-silicon carbide SiC on Si substrates was carried out by triode plasma CVD using ลฝ . dimethylsilane DMS as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by a
โฆ LIBER โฆ
Replication of substrate growth band and core structures by epitaxial CVD garnet films
โ Scribed by H.L. Glass; T.N. Hamilton
- Book ID
- 113184137
- Publisher
- Elsevier Science
- Year
- 1972
- Tongue
- English
- Weight
- 877 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0025-5408
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