A passively-Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) ceramic microchip laser was demonstrated to emit azimuthally polarized beam bus using a chromium-doped YAG (Cr 4+ :YAG) crystal as saturable absorber and a multilayer concentric subwavelength grating as polarization-selective ou
Repetition rate continuously controllable passively Q-switched Nd:YAG bonded microchip laser
โ Scribed by H. Lei; M. Gong; Y. Ping; L. Qiang
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 244 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1612-2011
No coin nor oath required. For personal study only.
โฆ Synopsis
A stable repetition rate continuously controllable passively Q-switched Nd:YAG bonded microchip laser is presented. A 0.8 mm-thickness 7 mm-diameter Nd:YAG crystal at 1.6 at.% is adapted as active medium and the saturable absorber for passively Q-switched pulse generating, a 0.2 mm-thickness 6.8-mm diameter Cr^4+^:YAG piece was thermal bonded into the Nd:YAG after primary optical contact. By using pulse pump and controlling the duty cycle of electric pulse and temperature of laser diode, a 1 W C-mount packaged fast-collimated laser diode, we can continuously achieve repetition rate from 1 kHz to 10 kHz as active Q-switched laser. The delay time at 10 kHz is 90 ฮผs, while the single pulse energy is 2.8 ฮผJ with pulse width of 2 ns.
๐ SIMILAR VOLUMES
Gain-switched Nd:YAG microchip lasers have produced 1 MHz repetition rate, single-frequency pulses with a pulse width of 32 ns. This is, to our knowledge, the highest repetition rate obtained in a single-frequency gain-switched solid state laser. The laser peak power and pulse width are mainly deter
We report an electro-optical Q-switch ultraviolet laser at 355 nm with narrow width and low repetition rate generated by pulsed-diode side-pumped Nd:YAG/KTP/LBO. The single-pulse energy is measured to be 18.7 mJ with a pulse-width of 7.32 ns at a repetition rate of 1 Hz and a pump current of 120 A.