A stable repetition rate continuously controllable passively Q-switched Nd:YAG bonded microchip laser is presented. A 0.8 mm-thickness 7 mm-diameter Nd:YAG crystal at 1.6 at.% is adapted as active medium and the saturable absorber for passively Q-switched pulse generating, a 0.2 mm-thickness 6.8-mm
Passively Q-switched Nd:YAG ceramic microchip laser with azimuthally polarized output
โ Scribed by J.-L. Li; D. Lin; L.-X. Zhong; K. Ueda; A. Shirakawa; M. Musha; W.-B. Chen
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 201 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1612-2011
No coin nor oath required. For personal study only.
โฆ Synopsis
A passively-Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) ceramic microchip laser was demonstrated to emit azimuthally polarized beam bus using a chromium-doped YAG (Cr 4+ :YAG) crystal as saturable absorber and a multilayer concentric subwavelength grating as polarization-selective output coupler. The laser's output power reached 512 mW with an initial slope efficiency of nearly 60%, and the pulse had 1.15-kW peak power with 40-ns duration and 11-kHz repetition rate at 3.9-W absorbed pump power. The laser beam's polarization degree was 97.6%. The thermal lensing effect in Nd:YAG microchip remained as a problem to be solved.
Averaged output power, mW
๐ SIMILAR VOLUMES
A monolithic Nd:YAG microchip laser with [110] cut Cr 4+ :YAG is presented. The output beam is linearly polarized with polarization ratio higher than 100:1. The polarization direction is stable, independent of pump power, crystal temperature, LD temperature. In single longitudinal mode operation, st
By using GaAs as both a saturable absorber and an output coupler, a laser-diode pumped passively Q-switched Nd:LuVO 4 laser has been realized for the first time to our knowledge. The maximum laser output power of 1.91 W has been obtained at the incident pump power of 12.7 W, corresponding to an opti
A diode-pumped doubly passively Q-switched Nd:LuVO4 laser with Cr 4+ :YAG saturable absorber and GaAs output coupler is realized. This laser can generate a shorter and more symmetric pulse profile when compared with pure GaAs. By using two Cr 4+ :YAG saturable absorbers with different small-signal t
By using a new saturable absorber V 3+ :YAG, a flashlamp-pumped passively Q-switched Nd:GdVO 4 laser at 1.34 ยตm has been realized. Both a-cut and c-cut Nd:GdVO4 crystals are used. The output single-pulse energy and the pulse width versus the pump energy for different initial transmissions of V 3+ :Y