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Reliability study of power RF LDMOS device under thermal stress

✍ Scribed by M.A. Belaïd; K. Ketata; K. Mourgues; M. Gares; M. Masmoudi; J. Marcon

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 716 KB
Volume: 38
Category: Article
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2006.08.004

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