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Reliability study of power RF LDMOS device under thermal stress

✍ Scribed by M.A. Belaïd; K. Ketata; K. Mourgues; M. Gares; M. Masmoudi; J. Marcon


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
716 KB
Volume
38
Category
Article
ISSN
0026-2692

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