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Reliability of loss-coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer

✍ Scribed by Jae-Ho Han; Sung-Woong Park


Book ID
102522374
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
156 KB
Volume
49
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

The authors achieved loss‐coupled 1.55 μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 10^6^ h at room temperature. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 636–638, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22208


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## Abstract We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550‐nm loss‐coupled Distributed Feedback laser diode fabricated with a simple step growth having an aut