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Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

✍ Scribed by Lee, Jung-Kyu; Chung, Hyun-Jong; Heo, Jinseong; Seo, Sunae; Cho, Il Hwan; Kwon, Hyuck-In; Lee, Jong-Ho

Book ID: 118130728
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 408 KB
Volume: 98
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3589120

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