Reliability of aluminum-gate metallization in GaAs power FETs : W. J. Slusark, Jr., G. L. Schnable, V. R. Monshaw and M. Fukuta. IEEE 21st Ann. Proc. Reliab. Phys. 211 (1983)

• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 129 KB
• Volume: 24
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(84)90494-3