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Relaxor properties and the mechanism of conduction in TlInS2crystals exposed to gamma irradiation

✍ Scribed by R. M. Sardarly; O. A. Samedov; I. Sh. Sadykhov; A. I. Nadzhafov; F. T. Salmanov

Book ID
110144002
Publisher
SP MAIK Nauka/Interperiodica
Year
2005
Tongue
English
Weight
94 KB
Volume
47
Category
Article
ISSN
1063-7834

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Dielectric properties, conduction mechan
Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity-doped gamma-irradiated incommensurate TlInS2
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## Abstract Temperature‐dependent dielectric and conduction properties of the impurity‐doped and gamma‐irradiated samples of TlInS~2~ semiconductor‐ferroelectric with incommensurate phase are presented. As found, in both cases a stable relaxor state is emerging in the material with temperature prov