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Relaxation spectrum of the TlSbSe2 thin films

✍ Scribed by D. Deger; K. Ulutas; S. Yildirim; N. Kalkan


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
274 KB
Volume
404
Category
Article
ISSN
0921-4526

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✦ Synopsis


The dielectric constant and the dielectric loss of TlSbSe 2 thin films, obtained via thermal evaporation of TlSbSe 2 crystals grown by Stockber-Bridgman technique, have been measured using ohmic Al electrodes in the frequency range 0.2-100 KHz and within the temperature interval 293-353 K. The capacitance are found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated too. A good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements has been observed.


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Generation of 1/f spectrum by relaxation
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Relaxation processes with various time constants generate a 1/ f spectrum when they are driven by a single random time series. Such simple processes may be the origin of the noise generated in some kinds of thin film resistors.