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Relaxation of amorphous structure of implanted Si under RF plasma treatment: Raman and EPR study

✍ Scribed by Artamonov, V V; Lysenko, V S; Nasarov, A N; Strelchuk, V V; Valakh, M Ya; Zaritskii, I M

Book ID
118189206
Publisher
Institute of Physics
Year
1991
Tongue
English
Weight
270 KB
Volume
6
Category
Article
ISSN
0268-1242

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## Abstract Self‐implanted silicon, exposed to thermal processing at high pressures, is studied by microRaman scattering. Implantation‐induced amorphization as well as high‐temperature and high‐pressure treatment‐induced solid‐phase epitaxial regrowth of the amorphized layer are observed. Based on