MicroRaman studies of implantation-induced amorphization of Si and subsequent regrowth under high-pressure and high-temperature treatment

✍ Scribed by Azhniuk, Yu. M. ;Schäfer, P. ;Gomonnai, A. V. ;Misiuk, A. ;Prujszczyk, M. ;Zahn, D. R. T.

• Book ID: 105366201
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 274 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026248

✦ Synopsis

Abstract

Self‐implanted silicon, exposed to thermal processing at high pressures, is studied by microRaman scattering. Implantation‐induced amorphization as well as high‐temperature and high‐pressure treatment‐induced solid‐phase epitaxial regrowth of the amorphized layer are observed. Based on Raman‐based strain profiles, the existence of layers with tensile and compressive strain at the depths within the projected range of the implanted ions is revealed. A retarding effect of high pressure on the epitaxial recrystallization process is confirmed.