Performance enhancement in Ge pMOSFETs w
Performance enhancement in Ge pMOSFETs with orientation fabricated with a Si-compatible process flow
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S. Dutta Gupta; J. Mitard; G. Eneman; B. De Jaeger; M. Meuris; M.M. Heyns
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Article
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2010
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Elsevier Science
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English
β 911 KB
The electrical characterization of Ge pMOSFETs having <1 1 0> and <1 0 0> orientations with gate lengths of 3 lm have been demonstrated with a Si-compatible process flow. Employment of <1 0 0> orientation in Ge pMOSFETs without incorporation of strain provided $10% enhancement in effective hole mobi